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XP6NA1R4CXT

XSemi Corporation
XP6NA1R4CXT
MOSFET N-CH 60V 41.6A PMPAK-5X6
8-PowerLDFN
Active
XP6NA1R4CXT
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XP6NA1R4CXT Attributes
TYPE DESCRIPTION SELECT
Series XP6NA1R4C
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 44.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11520 pF @ 50 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 113.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PMPAK® 5 x 6
Package / Case 8-PowerLDFN
2,938 In Stock
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Minimum: 1
Unit Price: $4.32
Total Price: $4.32
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