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XP4N2R1MT

XSemi Corporation
XP4N2R1MT
MOSFET N-CH 40V 33.8A PMPAK-5X6
8-PowerLDFN
Active
XP4N2R1MT
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XP4N2R1MT Attributes
TYPE DESCRIPTION SELECT
Series XP4N2R1
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 37.5A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9056 pF @ 20 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PMPAK® 5 x 6
Package / Case 8-PowerLDFN
5,221 In Stock
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Minimum: 1
Unit Price: $1.17
Total Price: $1.17
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