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XP3NA7R2MT

XSemi Corporation
XP3NA7R2MT
MOSFET N-CH -30V -13.3A SO-8
8-PowerLDFN
Active
XP3NA7R2MT
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XP3NA7R2MT Attributes
TYPE DESCRIPTION SELECT
Series XP3NA7R2
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20.4A (Ta), 43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.2mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 22.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PMPAK® 5 x 6
Package / Case 8-PowerLDFN
4,003 In Stock
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Minimum: 1
Unit Price: $0.36
Total Price: $0.36
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