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XP2P053N

XSemi Corporation
XP2P053N
MOSFET N+P 30V/-30V 7.8A/-5.5A
TO-236-3, SC-59, SOT-23-3
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XP2P053N
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XP2P053N Attributes
TYPE DESCRIPTION SELECT
Series XP2P053
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 53mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
3,780 In Stock
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Unit Price: $0.08
Total Price: $0.08
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