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XP10TN135H

XSemi Corporation
XP10TN135H
MOSFET N-CH 100V 3A SOT-223
TO-252-3, DPak (2 Leads + Tab), SC-63
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XP10TN135H
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XP10TN135H Attributes
TYPE DESCRIPTION SELECT
Series XP10TN135
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 928 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 20.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
8,624 In Stock
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Unit Price: $0.46
Total Price: $0.46
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