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XP10NA011J

XSemi Corporation
XP10NA011J
MOSFET N-CH 100V 300A TOLL
TO-251-3 Short Leads, IPak, TO-251AA
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XP10NA011J
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XP10NA011J Attributes
TYPE DESCRIPTION SELECT
Series XS10NA011
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 48.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2288 pF @ 80 V
FET Feature -
Power Dissipation (Max) 1.13W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-251S
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
2,444 In Stock
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Minimum: 1
Unit Price: $3.07
Total Price: $3.07
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