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XP10N3R5XT

XSemi Corporation
XP10N3R5XT
MOSFET N-CH 100V 67.7A TO220CFMT
8-PowerLDFN
Active
XP10N3R5XT
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XP10N3R5XT Attributes
TYPE DESCRIPTION SELECT
Series XP10N3R5
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6480 pF @ 80 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PMPAK® 5 x 6
Package / Case 8-PowerLDFN
6,576 In Stock
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Minimum: 1
Unit Price: $2.43
Total Price: $2.43
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