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XP10C150M

XSemi Corporation
XP10C150M
MOSFET N/P-CH 100V 2.5A 8SO
8-SOIC
Active
XP10C150M
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XP10C150M Attributes
TYPE DESCRIPTION SELECT
Series XP10C150
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V, 51.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 50V, 3040pF @ 50V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC
Supplier Device Package 8-SO
8,217 In Stock
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Unit Price: $0.64
Total Price: $0.64
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