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E3M0016120K

Wolfspeed, Inc.
E3M0016120K
SIC, MOSFET, 16M, 1200V, TO-247-
TO-247-4
Active
E3M0016120K
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E3M0016120K Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 22mOhm @ 80.28A, 15V
Vgs(th) (Max) @ Id 3.6V @ 22.08mA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 6922 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 483W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
357 In Stock
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Minimum: 1
Unit Price: $43.65
Total Price: $43.65
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