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CPMF-1200-S160B

Wolfspeed, Inc.
CPMF-1200-S160B
SICFET N-CH 1200V 28A DIE
Die
Active
CPMF-1200-S160B
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CPMF-1200-S160B Attributes
TYPE DESCRIPTION SELECT
Series Z-FET™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 28A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 47.1 nC @ 20 V
Vgs (Max) +25V, -5V
Input Capacitance (Ciss) (Max) @ Vds 928 pF @ 800 V
FET Feature -
Power Dissipation (Max) 202W (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
5,584 In Stock
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Unit Price: N/A
Total Price: N/A
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