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C3M0015065K-M

Wolfspeed, Inc.
C3M0015065K-M
MVF 200MM QUALIFIED MATERIAL
TO-247-4
Active
C3M0015065K-M
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C3M0015065K-M Attributes
TYPE DESCRIPTION SELECT
Series C3M™
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id 3.6V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 5011 pF @ 400 V
FET Feature -
Power Dissipation (Max) 416W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
897 In Stock
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Minimum: 1
Unit Price: $19.01
Total Price: $19.01
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