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C2M0080170P

Wolfspeed, Inc.
C2M0080170P
SICFET N-CH 1700V 40A TO247-4
TO-247-4
Active
C2M0080170P
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C2M0080170P Attributes
TYPE DESCRIPTION SELECT
Series C2M™
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 125mOhm @ 28A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 277W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
2,634 In Stock
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