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WNSC6D10650X6Q

WeEn Semiconductors
WNSC6D10650X6Q
WNSC6D10650X/TO220F-2L/STANDARD
TO-220-2 Full Pack, Isolated Tab
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WNSC6D10650X6Q
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WNSC6D10650X6Q Attributes
TYPE DESCRIPTION SELECT
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Capacitance @ Vr, F 500pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F
Operating Temperature - Junction -55°C ~ 175°C
3,025 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $0.86
Total Price: $0.86
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