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WNSC5D12650T6J
WeEn Semiconductors
WNSC5D12650T6J
DIODE SIL CARBIDE 650V 12A 5DFN
4-VSFN Exposed Pad
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WNSC5D12650T6J Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 12A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 60 µA @ 650 V | |
Capacitance @ Vr, F | 420pF @ 1V, 1MHz | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 4-VSFN Exposed Pad | |
Supplier Device Package | 5-DFN (8x8) | |
Operating Temperature - Junction | -55°C ~ 175°C |
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