Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WNSC5D086506Q
WeEn Semiconductors
WNSC5D086506Q
DIODE SIL CARB 650V 8A TO220AC
TO-220-2
Active
Payment Methods:
Shipping Methods:
WNSC5D086506Q Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 8A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V | |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220AC | |
| Operating Temperature - Junction | -55°C ~ 175°C |
6,270
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
