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WNSC208006Q

WeEn Semiconductors
WNSC208006Q
DIODE SCHOTTKY TO220-2L
TO-220-2
Active
WNSC208006Q
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WNSC208006Q Attributes
TYPE DESCRIPTION SELECT
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 450 µA @ 800 V
Capacitance @ Vr, F 655pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C
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