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NXPSC04650DJ
WeEn Semiconductors
NXPSC04650DJ
DIODE SIL CARBIDE 650V 4A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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NXPSC04650DJ Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 4A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V | |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | DPAK | |
| Operating Temperature - Junction | 175°C (Max) |
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