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NXPLQSC30650WQ
WeEn Semiconductors
NXPLQSC30650WQ
DIODE ARR SIC 650V 30A TO247-3
TO-247-3
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NXPLQSC30650WQ Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Diode Configuration | 1 Pair Common Cathode | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) (per Diode) | 30A | |
| Voltage - Forward (Vf) (Max) @ If | 1.95 V @ 15 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V | |
| Operating Temperature - Junction | 175°C (Max) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 |
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