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VQ1001P

Vishay Siliconix
VQ1001P
MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P
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VQ1001P Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 830mA
Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case -
Supplier Device Package 14-DIP
4,630 In Stock
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