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VQ1001P
Vishay Siliconix
VQ1001P
MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 4 N-Channel | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 830mA | |
Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V | |
Power - Max | 2W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | - | |
Supplier Device Package | 14-DIP |
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