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TP0202K-T1-E3

Vishay Siliconix
TP0202K-T1-E3
MOSFET P-CH 30V 385MA SOT23-3
TO-236-3, SC-59, SOT-23-3
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TP0202K-T1-E3
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TP0202K-T1-E3 Attributes
TYPE DESCRIPTION SELECT
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 31 pF @ 15 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
7,539 In Stock
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