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TN0200K-T1-E3
Vishay Siliconix
TN0200K-T1-E3
MOSFET N-CH 20V SOT23-3
TO-236-3, SC-59, SOT-23-3
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TN0200K-T1-E3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 730mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 50µA | |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
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