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SUD50N10-18P-GE3
Vishay Siliconix
SUD50N10-18P-GE3
MOSFET N-CH 100V 8.2A/50A TO252
TO-252-3, DPak (2 Leads + Tab), SC-63
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SUD50N10-18P-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 50A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 18.5mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 3W (Ta), 136.4W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252AA | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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