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SUD40N02-08-E3

Vishay Siliconix
SUD40N02-08-E3
MOSFET N-CH 20V 40A TO252
TO-252-3, DPak (2 Leads + Tab), SC-63
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SUD40N02-08-E3
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SUD40N02-08-E3 Attributes
TYPE DESCRIPTION SELECT
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 20 V
FET Feature -
Power Dissipation (Max) 8.3W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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