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SQ3419EEV-T1-GE3
Vishay Siliconix
SQ3419EEV-T1-GE3
MOSFET P-CH 40V 7.4A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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SQ3419EEV-T1-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 40 V | |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 1065 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 5W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 6-TSOP | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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