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SQ3418EEV-T1-GE3

Vishay Siliconix
SQ3418EEV-T1-GE3
MOSFET N-CH 40V 8A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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SQ3418EEV-T1-GE3
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SQ3418EEV-T1-GE3 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
6,346 In Stock
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