Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQ2310CES-T1_GE3

Vishay Siliconix
SQ2310CES-T1_GE3
MOSFET N-CH 20V 6A TO236
TO-236-3, SC-59, SOT-23-3
Active
SQ2310CES-T1_GE3
Payment Methods: paypal visa mastercard westernunion unionpay
Shipping Methods: DHL TNT FEDEX UPS SF
SQ2310CES-T1_GE3 Attributes
TYPE DESCRIPTION SELECT
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
5,283 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: N/A
Total Price: N/A
This price is for reference only, please contact us for now price support@easev.net.

Quick Inquiry


100,000+
Total Number Of Customers
3,000,000+
Stock Inventory
1200+
Worldwide Manufacturers
500,000+
Locally Available Stock