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SQ1420EEH-T1-GE3

Vishay Siliconix
SQ1420EEH-T1-GE3
MOSFET N-CH 60V 1.6A SC70-6
6-TSSOP, SC-88, SOT-363
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SQ1420EEH-T1-GE3
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SQ1420EEH-T1-GE3 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 140mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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