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SIZ900DT-T1-GE3
Vishay Siliconix
SIZ900DT-T1-GE3
MOSFET 2N-CH 30V 24A 6PWRPAIR
6-PowerPair™
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SIZ900DT-T1-GE3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Half Bridge) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 24A, 28A | |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 19.4A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1830pF @ 15V | |
| Power - Max | 48W, 100W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-PowerPair™ | |
| Supplier Device Package | 6-PowerPair™ |
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