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SIS612EDNT-T1-GE3
Vishay Siliconix
SIS612EDNT-T1-GE3
MOSFET N-CH 20V 50A PPAK1212-8S
PowerPAK® 1212-8S
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SIS612EDNT-T1-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 14A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® 1212-8S | |
Package / Case | PowerPAK® 1212-8S |
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