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SIA917DJ-T1-GE3
Vishay Siliconix
SIA917DJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6
PowerPAK® SC-70-6 Dual
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SIA917DJ-T1-GE3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V | |
| Power - Max | 6.5W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SC-70-6 Dual | |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
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