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SI8901EDB-T2-E1
Vishay Siliconix
SI8901EDB-T2-E1
MOSFET 2P-CH 20V 3.5A 6MICROFOOT
6-MICRO FOOT®CSP
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SI8901EDB-T2-E1 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 P-Channel (Dual) Common Drain | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 3.5A | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | 1V @ 350µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Power - Max | 1W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 6-MICRO FOOT®CSP | |
Supplier Device Package | 6-Micro Foot™ (2.36x1.56) |
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