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SI7455DP-T1-GE3

Vishay Siliconix
SI7455DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8
PowerPAK® SO-8
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SI7455DP-T1-GE3
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SI7455DP-T1-GE3 Attributes
TYPE DESCRIPTION SELECT
Series TrenchFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5160 pF @ 40 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
2,820 In Stock
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