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SI7380ADP-T1-E3

Vishay Siliconix
SI7380ADP-T1-E3
MOSFET N-CH 30V 40A PPAK SO-8
PowerPAK® SO-8
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SI7380ADP-T1-E3
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SI7380ADP-T1-E3 Attributes
TYPE DESCRIPTION SELECT
Series TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 7785 pF @ 15 V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
5,278 In Stock
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