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SI5515DC-T1-E3
Vishay Siliconix
SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A/3A 1206-8
8-SMD, Flat Lead
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SI5515DC-T1-E3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
Technology | MOSFET (Metal Oxide) | |
Configuration | N and P-Channel | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 4.4A, 3A | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 4.4A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Power - Max | 1.1W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 8-SMD, Flat Lead | |
Supplier Device Package | 1206-8 ChipFET™ |
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