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SI4914DY-T1-E3

Vishay Siliconix
SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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SI4914DY-T1-E3
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SI4914DY-T1-E3 Attributes
TYPE DESCRIPTION SELECT
Series LITTLE FOOT®
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.5A, 5.7A
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W, 1.16W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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