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SI4913DY-T1-E3
Vishay Siliconix
SI4913DY-T1-E3
MOSFET 2P-CH 20V 7.1A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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SI4913DY-T1-E3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 7.1A | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 500µA | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.1W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SOIC |
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