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SI4532ADY-T1-E3

Vishay Siliconix
SI4532ADY-T1-E3
MOSFET N/P-CH 30V 3.7A/3A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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SI4532ADY-T1-E3
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SI4532ADY-T1-E3 Attributes
TYPE DESCRIPTION SELECT
Series TrenchFET®
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.7A, 3A
Rds On (Max) @ Id, Vgs 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.13W, 1.2W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
8,271 In Stock
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