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SI4501ADY-T1-E3
Vishay Siliconix
SI4501ADY-T1-E3
MOSFET N/P-CH 30V/8V 6.3A 8SOIC
8-SOIC (0.154", 3.90mm Width)
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SI4501ADY-T1-E3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | N and P-Channel, Common Drain | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V, 8V | |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 4.1A | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.8A, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SOIC |
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