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SI4466DY-T1-E3
Vishay Siliconix
SI4466DY-T1-E3
MOSFET N-CH 20V 9.5A 8SO
8-SOIC (0.154", 3.90mm Width)
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SI4466DY-T1-E3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 13.5A, 4.5V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 1.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SOIC | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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