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SI4110DY-T1-GE3
Vishay Siliconix
SI4110DY-T1-GE3
MOSFET N-CH 80V 17.3A 8SO
8-SOIC (0.154", 3.90mm Width)
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SI4110DY-T1-GE3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 80 V | |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2205 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.6W (Ta), 7.8W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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