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SI3805DV-T1-GE3

Vishay Siliconix
SI3805DV-T1-GE3
MOSFET P-CH 20V 3.3A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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SI3805DV-T1-GE3
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SI3805DV-T1-GE3 Attributes
TYPE DESCRIPTION SELECT
Series LITTLE FOOT®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 84mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta), 1.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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