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SI3460DV-T1-E3
Vishay Siliconix
SI3460DV-T1-E3
MOSFET N-CH 20V 5.1A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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SI3460DV-T1-E3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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