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SI3459DV-T1-E3
Vishay Siliconix
SI3459DV-T1-E3
MOSFET P-CH 60V 2.2A 6TSOP
SOT-23-6 Thin, TSOT-23-6
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SI3459DV-T1-E3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60 V | |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 220mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 2W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 6-TSOP | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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