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SI2392DS-T1-GE3
Vishay Siliconix
SI2392DS-T1-GE3
MOSFET N-CH 100V 3.1A SOT-23
TO-236-3, SC-59, SOT-23-3
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SI2392DS-T1-GE3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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