Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2335DS-T1-GE3
Vishay Siliconix
SI2335DS-T1-GE3
MOSFET P-CH 12V 3.2A SOT23-3
TO-236-3, SC-59, SOT-23-3
Active
Payment Methods:
Shipping Methods:
SI2335DS-T1-GE3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 750mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
2,473
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
