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SI2309DS-T1-E3
Vishay Siliconix
SI2309DS-T1-E3
MOSFET P-CH 60V 1.25A SOT23-3
TO-236-3, SC-59, SOT-23-3
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SI2309DS-T1-E3 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | TrenchFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 1.25A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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