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SI1013X-T1-E3
Vishay Siliconix
SI1013X-T1-E3
MOSFET P-CH 20V 350MA SC89-3
SC-89, SOT-490
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SI1013X-T1-E3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V | |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) | |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V | |
Vgs (Max) | ±6V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 250mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | SC-89-3 | |
Package / Case | SC-89, SOT-490 |
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