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IRFL9110TR
Vishay Siliconix
IRFL9110TR
MOSFET P-CH 100V 1.1A SOT223
TO-261-4, TO-261AA
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IRFL9110TR Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 660mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | SOT-223 | |
Package / Case | TO-261-4, TO-261AA |
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