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IRFD9123
Vishay Siliconix
IRFD9123
MOSFET P-CH 100V 1A 4DIP
4-DIP (0.300", 7.62mm)
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IRFD9123 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | 4-HVMDIP | |
| Package / Case | 4-DIP (0.300", 7.62mm) |
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