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IRFD120
Vishay Siliconix
IRFD120
MOSFET N-CH 100V 1.3A 4DIP
4-DIP (0.300", 7.62mm)
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IRFD120 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.3W (Ta) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | 4-HVMDIP | |
Package / Case | 4-DIP (0.300", 7.62mm) |
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